FDN352AP mosfet equivalent, p-channel mosfet.
* −1.3 A, −30 V RDS(ON) = 180 mW @ VGS = −10 V
* −1.1 A, −30 V RDS(ON) = 300 mW @ VGS = −4.5 V
* High Performance Trench Technology for Extremely Low RDS(ON) .
where low in−line power loss is needed in a very small outline surface mount package.
Features
* −1.3 A, −30 V RDS(O.
This P−Channel Logic Level MOSFET is produced using onsemi
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are well .
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